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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 17, Pages 24–30 (Mi pjtf8941)  
Low-temperature properties of porous silicon-indium nanocomposite

L. M. Sorokin, A. V. Fokin, A. E. Kalmykov, A. V. Chernyaev

Ioffe Institute, St. Petersburg
Full-text PDF (295 kB)
Abstract: A new nanocomposite material with stable properties has been obtained representing a metal (indium) incorporated into a semiconducting porous silicon (por-Si) matrix. Electrical properties of the por-Si-In nanocomposite have been studied for the first time. At low temperatures ($T$ = 1.4–4.2 K), the por-Si-In samples exhibit a positive magnetoresistance [$\Delta R/R(H=0)\approx$ 600%], which is related to breakage of the superconducting state of In particles in the por-Si matrix.
Received: 20.02.2012
English version:
Technical Physics Letters, 2012, Volume 38, Issue 9, Pages 789–792
DOI: https://doi.org/10.1134/S106378501209012X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: L. M. Sorokin, A. V. Fokin, A. E. Kalmykov, A. V. Chernyaev, “Low-temperature properties of porous silicon-indium nanocomposite”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:17 (2012), 24–30; Tech. Phys. Lett., 38:9 (2012), 789–792
Citation in format AMSBIB
\Bibitem{SorFokKal12}
\by L.~M.~Sorokin, A.~V.~Fokin, A.~E.~Kalmykov, A.~V.~Chernyaev
\paper Low-temperature properties of porous silicon-indium nanocomposite
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2012
\vol 38
\issue 17
\pages 24--30
\mathnet{http://mi.mathnet.ru/pjtf8941}
\elib{https://elibrary.ru/item.asp?id=20327966}
\transl
\jour Tech. Phys. Lett.
\yr 2012
\vol 38
\issue 9
\pages 789--792
\crossref{https://doi.org/10.1134/S106378501209012X}
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