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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 17, Pages 61–68
(Mi pjtf8946)
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This article is cited in 1 scientific paper (total in 1 paper)
Stabilization of the NiF$_2$ orthorhombic phase in epitaxial heterostructures on CaF$_2$/Si(111) substrates
A. G. Banshchikov, K. V. Koshmak, A. V. Krupin, N. S. Sokolov Ioffe Institute, St. Petersburg
Abstract:
Epitaxial NiF$_2$ layers have been grown for the first time on CaF$_2$(111)/Si(111) substrates by molecular beam epitaxy. By high-energy electron diffraction and X-ray diffractometry, it has been established that the layers crystallize in the metastable orthorhombic phase and the epitaxial relations at the NiF$_2$/CaF$_2$ heterointerface have been determined: (100)$_{\mathrm{NiF}_2}$ $\parallel$ (111)$_{\mathrm{CaF}_2}$, [001]$_{\mathrm{NiF}_2}$ $\parallel$ $[1\bar10]_{\mathrm{CaF}_2}$.
Received: 31.03.2012
Citation:
A. G. Banshchikov, K. V. Koshmak, A. V. Krupin, N. S. Sokolov, “Stabilization of the NiF$_2$ orthorhombic phase in epitaxial heterostructures on CaF$_2$/Si(111) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:17 (2012), 61–68; Tech. Phys. Lett., 38:9 (2012), 809–811
Linking options:
https://www.mathnet.ru/eng/pjtf8946 https://www.mathnet.ru/eng/pjtf/v38/i17/p61
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