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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 17, Pages 69–77 (Mi pjtf8947)  
This article is cited in 15 scientific papers (total in 15 papers)

A study of vacuum-ultraviolet stability of silicon photodiodes

V. V. Zabrodskii, V. P. Belik, P. N. Aruev, B. Ya. Ber, S. V. Bobashev, M. V. Petrenko, V. L. Sukhanov

Ioffe Institute, St. Petersburg
Full-text PDF (230 kB) Citations (15)
Abstract: Silicon photodiodes have been tested for resistance to vacuum-ultraviolet radiation at 121.6 nm. The responsivities of the $p$–$n$ and $n$–$p$ photodiodes under study were found to degrade by tens of percent at a VUV radiation dose on the order of tens of mJ/cm$^2$. The effect of reversible photocurrent relaxation has been observed in detectors based on $n$–$p$ structures.
Received: 16.04.2012
English version:
Technical Physics Letters, 2012, Volume 38, Issue 9, Pages 812–815
DOI: https://doi.org/10.1134/S1063785012090143
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Zabrodskii, V. P. Belik, P. N. Aruev, B. Ya. Ber, S. V. Bobashev, M. V. Petrenko, V. L. Sukhanov, “A study of vacuum-ultraviolet stability of silicon photodiodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:17 (2012), 69–77; Tech. Phys. Lett., 38:9 (2012), 812–815
Citation in format AMSBIB
\Bibitem{ZabBelAru12}
\by V.~V.~Zabrodskii, V.~P.~Belik, P.~N.~Aruev, B.~Ya.~Ber, S.~V.~Bobashev, M.~V.~Petrenko, V.~L.~Sukhanov
\paper A study of vacuum-ultraviolet stability of silicon photodiodes
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2012
\vol 38
\issue 17
\pages 69--77
\mathnet{http://mi.mathnet.ru/pjtf8947}
\elib{https://elibrary.ru/item.asp?id=20327972}
\transl
\jour Tech. Phys. Lett.
\yr 2012
\vol 38
\issue 9
\pages 812--815
\crossref{https://doi.org/10.1134/S1063785012090143}
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    • This publication is cited in the following 15 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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