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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 17, Pages 78–83
(Mi pjtf8948)
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This article is cited in 3 scientific papers (total in 3 papers)
Molecular-beam epitaxy of (Ga,Mn)As crystal nanowires on surface GaAs(100)
A. D. Bouravlevabc, G. O. Abdrashitovabc, G. È. Cirlinabc a Ioffe Institute, St. Petersburg
b St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
c Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
Abstract:
Arrays of (Ga,Mn)As crystal nanowires on a GaAs (100) substrate were first obtained using molecular-beam epitaxy at 485$^\circ$C. From the diffraction patterns of the reflected fast electrons, it was found that crystal nanowires are formed in this system in a cubic crystallographic phase.
Received: 25.04.2012
Citation:
A. D. Bouravlev, G. O. Abdrashitov, G. È. Cirlin, “Molecular-beam epitaxy of (Ga,Mn)As crystal nanowires on surface GaAs(100)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:17 (2012), 78–83; Tech. Phys. Lett., 38:9 (2012), 816–818
Linking options:
https://www.mathnet.ru/eng/pjtf8948 https://www.mathnet.ru/eng/pjtf/v38/i17/p78
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