|
|
Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 17, Pages 90–95
(Mi pjtf8950)
|
|
|
|
The threshold of nanopore formation in ion-implanted platinum
V. A. Ivchenkoab a Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
b Institute of Electrophysics, Ural Branch, Russian Academy of Sciences, Ekaterinburg
Abstract:
The method of field-ion microscopy was used to determine the threshold of nanopore formation in ion-implanted platinum. The threshold for ion-implanted platinum corresponds to fluence $F$ = 10$^{17}$ ions/cm$^2$. The size of nanopores is determined: 1–5 nm (transverse) and 1–9 nm (lateral, across the target depth). It is found that up to 40% of nanopores are located in the subsurface layer with a thickness of 10 nm. The obtained results can be used for prediction of radiation stability of materials based on fcc metals.
Received: 13.04.2012
Citation:
V. A. Ivchenko, “The threshold of nanopore formation in ion-implanted platinum”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:17 (2012), 90–95; Tech. Phys. Lett., 38:9 (2012), 822–824
Linking options:
https://www.mathnet.ru/eng/pjtf8950 https://www.mathnet.ru/eng/pjtf/v38/i17/p90
|
|