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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 17, Pages 90–95 (Mi pjtf8950)  

The threshold of nanopore formation in ion-implanted platinum

V. A. Ivchenkoab

a Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
b Institute of Electrophysics, Ural Branch, Russian Academy of Sciences, Ekaterinburg
Abstract: The method of field-ion microscopy was used to determine the threshold of nanopore formation in ion-implanted platinum. The threshold for ion-implanted platinum corresponds to fluence $F$ = 10$^{17}$ ions/cm$^2$. The size of nanopores is determined: 1–5 nm (transverse) and 1–9 nm (lateral, across the target depth). It is found that up to 40% of nanopores are located in the subsurface layer with a thickness of 10 nm. The obtained results can be used for prediction of radiation stability of materials based on fcc metals.
Received: 13.04.2012
English version:
Technical Physics Letters, 2012, Volume 38, Issue 9, Pages 822–824
DOI: https://doi.org/10.1134/S1063785012090076
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. A. Ivchenko, “The threshold of nanopore formation in ion-implanted platinum”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:17 (2012), 90–95; Tech. Phys. Lett., 38:9 (2012), 822–824
Citation in format AMSBIB
\Bibitem{Ivc12}
\by V.~A.~Ivchenko
\paper The threshold of nanopore formation in ion-implanted platinum
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2012
\vol 38
\issue 17
\pages 90--95
\mathnet{http://mi.mathnet.ru/pjtf8950}
\elib{https://elibrary.ru/item.asp?id=20327975}
\transl
\jour Tech. Phys. Lett.
\yr 2012
\vol 38
\issue 9
\pages 822--824
\crossref{https://doi.org/10.1134/S1063785012090076}
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