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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 19, Pages 83–89
(Mi pjtf8974)
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This article is cited in 14 scientific papers (total in 14 papers)
Fabrication of ultrafine silicon layers on sapphire
A. A. Shemukhinabcd, Yu. V. Balakshinabcd, V. S. Chernyshabcd, A. S. Patrakeevabcd, S. A. Golubkovabcd, N. N. Egorovabcd, A. I. Sidorovabcd, B. A. Malyukovabcd, V. N. Statsenkoabcd, V. D. Chumakabcd a Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics
b Lomonosov Moscow State University
c Research Institute of Materials Science and Technology, Zelenograd
d EPIEL Company, Zelenograd, Moscow
Abstract:
The effect of energy, dosage, and temperature of irradiation of silicon-on-sapphire structures by Si$^+$ ions, as well as parameters of recrystallization annealing, on crystallinity of silicon film is shown. Implantation conditions and recrystallization annealing conditions are determined.
Received: 08.06.2012
Citation:
A. A. Shemukhin, Yu. V. Balakshin, V. S. Chernysh, A. S. Patrakeev, S. A. Golubkov, N. N. Egorov, A. I. Sidorov, B. A. Malyukov, V. N. Statsenko, V. D. Chumak, “Fabrication of ultrafine silicon layers on sapphire”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:19 (2012), 83–89; Tech. Phys. Lett., 38:10 (2012), 907–909
Linking options:
https://www.mathnet.ru/eng/pjtf8974 https://www.mathnet.ru/eng/pjtf/v38/i19/p83
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