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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 20, Pages 1–7
(Mi pjtf8976)
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This article is cited in 9 scientific papers (total in 9 papers)
Calculating the extended defect contrast for the X-ray-beam-induced current method
Ya. L. Shabelnikovaab, E. B. Yakimovab, M. V. Grigor'evab, R. R. Fakhrtdinovab, V. A. Bushuevab a Institute of Microelectronics Technology and High-Purity Materials RAS
b Lomonosov Moscow State University
Abstract:
The contrast of extended defects representing dislocations and grain boundaries has been calculated for the X-ray-beam-induced current (XBIC) method. It is established that the maximum contrast increases with the diffusion length of excess charge and decreases with increasing X-ray beam width. The simulated XBIC profile contrasts are compared to experimentally measured patterns.
Received: 20.03.2012
Citation:
Ya. L. Shabelnikova, E. B. Yakimov, M. V. Grigor'ev, R. R. Fakhrtdinov, V. A. Bushuev, “Calculating the extended defect contrast for the X-ray-beam-induced current method”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:20 (2012), 1–7; Tech. Phys. Lett., 38:10 (2012), 913–916
Linking options:
https://www.mathnet.ru/eng/pjtf8976 https://www.mathnet.ru/eng/pjtf/v38/i20/p1
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