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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 21, Pages 13–21 (Mi pjtf8991)  
This article is cited in 3 scientific papers (total in 3 papers)

Signal amplification under stochastic resonance in vanadium dioxide film

V. Sh. Aliev, S. G. Bortnikov, M. A. Dem'yanenko

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Full-text PDF (454 kB) Citations (3)
Abstract: The phenomenon of stochastic resonance with an input signal gain of 1.6 times was observed in the planar structure that is connected in series with the loading resistor and has a VO$_2$ conducting channel. It was shown that the signal-to-noise ratio transferring in the circuit can reach 250 times.
Received: 18.04.2012
English version:
Technical Physics Letters, 2012, Volume 38, Issue 11, Pages 965–968
DOI: https://doi.org/10.1134/S1063785012110028
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. Sh. Aliev, S. G. Bortnikov, M. A. Dem'yanenko, “Signal amplification under stochastic resonance in vanadium dioxide film”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:21 (2012), 13–21; Tech. Phys. Lett., 38:11 (2012), 965–968
Citation in format AMSBIB
\Bibitem{AliBorDem12}
\by V.~Sh.~Aliev, S.~G.~Bortnikov, M.~A.~Dem'yanenko
\paper Signal amplification under stochastic resonance in vanadium dioxide film
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2012
\vol 38
\issue 21
\pages 13--21
\mathnet{http://mi.mathnet.ru/pjtf8991}
\elib{https://elibrary.ru/item.asp?id=20328016}
\transl
\jour Tech. Phys. Lett.
\yr 2012
\vol 38
\issue 11
\pages 965--968
\crossref{https://doi.org/10.1134/S1063785012110028}
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    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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