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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 24, Pages 86–94 (Mi pjtf9039)  
This article is cited in 1 scientific paper (total in 1 paper)

Growing InN films by plasma-assisted metalorganic vapor-phase epitaxy on Al$_2$O$_3$ and YSZ substrates in plasma generated by gyrotron radiation under electron cyclotron resonance conditions

Yu. N. Buzyninab, M. E. Viktorovab, A. V. Vodopyanovab, S. V. Golubevab, M. N. Drozdovab, Yu. N. Drozdovab, A. Yu. Luk'yanovab, D. A. Mansfeldab, E. V. Skorokhodovab, O. I. Khrykinab, V. I. Shashkinab

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod
Full-text PDF (269 kB) Citations (1)
Abstract: Hexagonal indium nitride (InN) films on (111)- and (100)-oriented yttria-stabilized zirconia (YSZ) substrates and (0001)-oriented Al$_2$O$_3$ substrates have been grown for the first time at a rate of 1 $\mu$m/h by the method of metalorganic vapor-phase epitaxy with plasma-assisted nitrogen activation in an electron cyclotron resonance discharge generated by gyrotron radiation at low-temperature (350$^\circ$C) growth. InN films grown without buffer layers possess a textured polycrystalline structure. Using an InN/GaN double buffer layer, single-crystalline InN films have been obtained on Al$_2$O$_3$(0001) substrates. Data on the morphology, structure, and photoluminescent properties of the obtained InN films are presented.
Received: 06.07.2012
English version:
Technical Physics Letters, 2013, Volume 39, Issue 1, Pages 51–54
DOI: https://doi.org/10.1134/S1063785013010069
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Yu. N. Buzynin, M. E. Viktorov, A. V. Vodopyanov, S. V. Golubev, M. N. Drozdov, Yu. N. Drozdov, A. Yu. Luk'yanov, D. A. Mansfeld, E. V. Skorokhodov, O. I. Khrykin, V. I. Shashkin, “Growing InN films by plasma-assisted metalorganic vapor-phase epitaxy on Al$_2$O$_3$ and YSZ substrates in plasma generated by gyrotron radiation under electron cyclotron resonance conditions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:24 (2012), 86–94; Tech. Phys. Lett., 39:1 (2013), 51–54
Citation in format AMSBIB
\Bibitem{BuzVikVod12}
\by Yu.~N.~Buzynin, M.~E.~Viktorov, A.~V.~Vodopyanov, S.~V.~Golubev, M.~N.~Drozdov, Yu.~N.~Drozdov, A.~Yu.~Luk'yanov, D.~A.~Mansfeld, E.~V.~Skorokhodov, O.~I.~Khrykin, V.~I.~Shashkin
\paper Growing InN films by plasma-assisted metalorganic vapor-phase epitaxy on Al$_2$O$_3$ and YSZ substrates in plasma generated by gyrotron radiation under electron cyclotron resonance conditions
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2012
\vol 38
\issue 24
\pages 86--94
\mathnet{http://mi.mathnet.ru/pjtf9039}
\elib{https://elibrary.ru/item.asp?id=20328066}
\transl
\jour Tech. Phys. Lett.
\yr 2013
\vol 39
\issue 1
\pages 51--54
\crossref{https://doi.org/10.1134/S1063785013010069}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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