Dependences of the shape of the crystallization front and growth rate of a silicon ingot on the heat transfer mode in the Bridgman–Stockbarger method

Conjugate heat transfer during growth of multisilicon crystals in flat crucibles by the Bridgman–Stockbarger method is studied numerically. Nonstationary equations of convective heat transfer in the region occupied by molten silicon and the heat-conduction equations for the solidified silicon mass and the walls of the graphite crucible of regular cylindrical shape are solved taking into account the heat of the phase transition. A comparison is made of the crystallization processes in the transient heat conduction mode and in the mode of thermogravitational convection.