Abstract:
The report will consider various systems of equations that arise when considering drift, diffusion and thermal processes in crystalline semiconductors in the quasi-stationary approximation of Maxwell's equations within the framework of the electron-hole formalism. First, we will successively consider three components of our model: field (Maxwell's equations), hydrodynamics of electrons and holes, thermal part. As a result, we obtain three groups of equations, which together form systems of equations.