Method for preparing photoresist grating masks. Part II

A method was developed for preparing photoresist grating masks on substrate materials having a high reflection coefficient, such as $GaAs$ and metals. In order to reduce this reflection coefficient, an intermediate $CuO$ layer of specified thickness was used between the photoresist and the highly reflecting substrate. This method was employed to prepare photoresist masks (which had a period of $0,6\mu m$, a depth of $0,27\mu m$, and a groove width equal to the width of the gap between the grooves) on a titanium substrate with a $CuO$ sublayer. The difference between the actual and calculated grating parameters did not exceed 20-30%.