E. Hulicius, A. Abrahám, T. Sĭmeček, “Simple pulsed semiconductor lasers”, Kvantovaya Elektronika, 15:11 (1988), 2199–2203 [Sov J Quantum Electron, 18:11 (1988), 1378

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Kvantovaya Elektronika, 1988, Volume 15, Number 11, Pages 2199–2203 (Mi qe12614)

International conference on semiconductor injection lasers SELCO-87

Simple pulsed semiconductor lasers

E. Hulicius, A. Abrahám, T. Sĭmeček

Full-text PDF (661 kB)

Abstract: A brief review is given of the main characteristics of pulsed GaAlAs/GaAs lasers made in Czechoslovakia. A description is given of laser structures with large optical cavities and their electrical, optical, and service life characteristics are reported.

English version:
Soviet Journal of Quantum Electronics, 1988, Volume 18, Issue 11, Pages 1378–1381
DOI: https://doi.org/10.1070/QE1988v018n11ABEH012614

Bibliographic databases:

Document Type: Article

UDC: 621.373.826.038.825.4

PACS: 42.55.Px, 42.60.By, 42.60.Da, 42.60.Rn, 42.79.Bh

Language: Russian

Citation: E. Hulicius, A. Abrahám, T. Sĭmeček, “Simple pulsed semiconductor lasers”, Kvantovaya Elektronika, 15:11 (1988), 2199–2203 [Sov J Quantum Electron, 18:11 (1988), 1378–1381]

Linking options:

https://www.mathnet.ru/eng/qe12614

https://www.mathnet.ru/eng/qe/v15/i11/p2199

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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