Two-section broadband superluminescent diodes

Superluminescent diodes (SLDs) with two electrically isolated injection areas based on a single quantum-well GaAlAs/GaAs heterostructure operating at around 825 nm are studied experimentally. It is shown that varying the currents injected through the sections allows these SLDs to produce the cw output power from a few to nearly a hundred milliwatts without changing the spectral bandwidth (about 70 nm).