Dissociative excitation of the silicon atom in a transverse electric discharge

The results are reported of an investigation of the excitation of silicon atoms in the course of dissociation of silane molecules on excitation of an He – Ar – SiH$_4$ mixture in a pulsed transverse discharge. The SiI $(3p^2~^1D_2 -4s^1P_1^0)$ line at 288.2 nm is the strongest of the silicon lines in the range $\Delta \lambda$ = 200 – 600 nm and it is of interest for utilisation in silicon vapour lasers. A discharge in mixtures of silane with He (or Ar) atoms can also be used to deposit porous semiconductor coatings on the electrodes employed in pulsed transverse discharges.