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This article is cited in 1 scientific paper (total in 1 paper)
Laser applications and other topics in quantum electronics
Comparative analysis of two methods for calculating reflectance of black silicon
I. M. Akhmedzhanova, D. S. Kibalovb, V. K. Smirnovb a A. M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow
b Quantum Silicon LLC, Moscow, Russia
Abstract:
We report a detailed numerical simulation of the reflection of visible light from a sub-wavelength grating with a rectangular profile on the silicon surface. Simulation is carried out by the effective refractive index method and rigorous coupled-wave analysis. The dependences of the reflectance on the grating depth, fill factor and angle of incidence for TE and TM polarisations are obtained and analysed. Good agreement between the results obtained by the two methods for grating periods of ~100 nm is found. The possibility of reducing the polarised light reflectance to about 1% by adjusting the depth and the grating fill factor is demonstrated. The characteristics of the Brewster effect manifestation (pseudo-Brewster angle) in the system under study are considered. The possibility of the pseudo-Brewster angle existence and its absence for both polarisations of the incident light is shown as a function of the parameters of a rectangular nanostructure on the surface.
Keywords:
black silicon, sub-wavelength grating, reflectance, pseudo-Brewster angle.
Received: 20.02.2014 Revised: 22.05.2014
Citation:
I. M. Akhmedzhanov, D. S. Kibalov, V. K. Smirnov, “Comparative analysis of two methods for calculating reflectance of black silicon”, Kvantovaya Elektronika, 45:4 (2015), 385–390 [Quantum Electron., 45:4 (2015), 385–390]
Linking options:
https://www.mathnet.ru/eng/qe16145 https://www.mathnet.ru/eng/qe/v45/i4/p385
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