A. A. Kochetkov, “Statistical features of degradation of heterojunction lasers during aging and upon irradiation”, Kvantovaya Elektronika, 30:4 (2000), 321–322 [Quantum Electron., 30:4 (2000), 321

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Kvantovaya Elektronika, 2000, Volume 30, Number 4, Pages 321–322 (Mi qe1724)

Lasers

Statistical features of degradation of heterojunction lasers during aging and upon irradiation

A. A. Kochetkov

22 Research Centre, Mytischi, Moscow region

Full-text PDF (114 kB)

Abstract: Specific features of degradation of the GaAlAs and InGaAsP heterojunction lasers are studied during aging at 60 °C and upon irradiation by fast particles. Analytic expressions are obtained that describe an increase in the dispersion of the threshold current distribution with the time of the operating-life test and the dose of irradiation by fast particles.

Received: 24.11.1999

English version:
Quantum Electronics, 2000, Volume 30, Issue 4, Pages 321–322
DOI: https://doi.org/10.1070/QE2000v030n04ABEH001724

Bibliographic databases:

Document Type: Article

PACS: 42.55.Px, 42.60.Lh, 61.80.Hg

Language: Russian

Citation: A. A. Kochetkov, “Statistical features of degradation of heterojunction lasers during aging and upon irradiation”, Kvantovaya Elektronika, 30:4 (2000), 321–322 [Quantum Electron., 30:4 (2000), 321–322]

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https://www.mathnet.ru/eng/qe1724

https://www.mathnet.ru/eng/qe/v30/i4/p321

Citing articles in Google Scholar: Russian citations, English citations
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