D. V. Gulyaev, K. S. Zhuravlev, “InP-based electro-optic and electro-absorption modulators for the 1.5-μm spectral range”, Kvantovaya Elektronika, 53:11 (2023), 821–832 [Bull. Lebedev Physics Institute, 51:suppl. 2 (2024), S101

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Kvantovaya Elektronika, 2023, Volume 53, Number 11, Pages 821–832 (Mi qe18351)

This article is cited in 1 scientific paper (total in 1 paper)

Review

InP-based electro-optic and electro-absorption modulators for the 1.5-μm spectral range

D. V. Gulyaev, K. S. Zhuravlev

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090, Novosibirsk, Russia

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Abstract: The review examines telecom electro-optic modulators made of group III–V compound semiconductor material composed of indium phosphide. The operation principles of modulators and issues of heterostructure and modulator design optimization are considered; the results of recent developments and the achieved parameters of modulators are presented.

Keywords: electro-optic modulator, electro-absorption modulator, InP, InGaAlAs, quantum wells, Stark effect.

Funding agency	Grant number
Ministry of Science and Higher Education of the Russian Federation	FWGW-2022-0005
The work was performed within the framework of the State assignment of the Ministry of Science and Higher Education of the Russian Federation (no. FWGW-2022-0005).

Received: 29.11.2023
Accepted: 01.02.2024

English version:
Bull. Lebedev Physics Institute, 2024, Volume 51, Issue suppl. 2, Pages S101–S116
DOI: https://doi.org/10.3103/S1068335624600608

Document Type: Article

Language: Russian

Citation: D. V. Gulyaev, K. S. Zhuravlev, “InP-based electro-optic and electro-absorption modulators for the 1.5-μm spectral range”, Kvantovaya Elektronika, 53:11 (2023), 821–832 [Bull. Lebedev Physics Institute, 51:suppl. 2 (2024), S101–S116]

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https://www.mathnet.ru/eng/qe/v53/i11/p821

This publication is cited in the following 1 articles:

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