Formation of p–n junctions and ohmic contacts with GaAs by laser solid-phase diffusion

An experimental investigation was made of the electrophysical properties of p–n junctions and ohmic contacts formed by laser solid-phase diffusion of, respectively, zinc and a contact group of elements (Au—Au : Ge) in a plate of n-type GaAs. The diffusion was induced by radiation from a cw CO₂ laser. The zero-bias resistance of the p–n junctions was ~10¹⁰ Ω and the leakage current did not exceed 1 nA under a reverse bias voltage of 8 V. A typical resistance of the nonrectifying contacts was 5 × 10^–7 Ω cm².