E. G. Golikova, V. P. Duraev, S. A. Kozikov, V. G. Krigel, O. A. Labutin, V. I. Shveikin, “Quantum-well InGaAsP\/InP lasers”, Kvantovaya Elektronika, 22:2 (1995), 105–107 [Quantum Electron., 25:2 (1995), 96

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Kvantovaya Elektronika, 1995, Volume 22, Number 2, Pages 105–107 (Mi qe296)

This article is cited in 1 scientific paper (total in 1 paper)

Lasers

Quantum-well InGaAsP\/InP lasers

E. G. Golikova^a, V. P. Duraev^b, S. A. Kozikov^a, V. G. Krigel^a, O. A. Labutin^a, V. I. Shveikin^a

^a Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
^b "Nolatech" Joint-Stock Company, Moscow

Full-text PDF (166 kB) Citations (1)

Abstract: An investigation is reported of InGaAsP\/InP heterojunction lasers (emitting at 1.55 μm) with quantum-well layers formed by MOCVD epitaxy. A description is given of the geometry of the quantum-well layers. The Auger electron profile and the watt—ampere characteristics are reported. The main parameters of these quantum-well lasers are analysed and it is shown that they have low threshold currents, a narrow luminescence spectrum, and low optical losses (less than 13 cm^–1). Moreover, their characteristic temperature is higher than that of lasers made from bulk crystals.

English version:
Quantum Electronics, 1995, Volume 25, Issue 2, Pages 96–98
DOI: https://doi.org/10.1070/QE1995v025n02ABEH000296

Bibliographic databases:

Document Type: Article

PACS: 42.55.Px, 42.60.Lh

Language: Russian

Citation: E. G. Golikova, V. P. Duraev, S. A. Kozikov, V. G. Krigel, O. A. Labutin, V. I. Shveikin, “Quantum-well InGaAsP\/InP lasers”, Kvantovaya Elektronika, 22:2 (1995), 105–107 [Quantum Electron., 25:2 (1995), 96–98]

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https://www.mathnet.ru/eng/qe296

https://www.mathnet.ru/eng/qe/v22/i2/p105

This publication is cited in the following 1 articles:

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