Analysis of electron confinement by a periodic semiconductor structure

The use of a periodic quantum-well heterostructure as cladding layer in semiconductor laser structures based on Al_xGa_1–xAs/GaAs and Ga_xIn_1–xAs_yP_1–y/InP is analyzed theoretically. The dependence of the reflection coefficient for electron waves on the electron energy is calculated. The dependence of the leakage current density of electrons injected into the active region on the electron concentration is also calculated. Parameters are found for the superlattice which raise the height of the effective potential barrier by more than 100% and which lower the leakage current density of electrons injected into the active region by more than three orders of magnitude. It is concluded that such heterostructures can be used as cladding layers for semiconductor lasers operating at high temperatures or at short wavelengths.