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Lasers
Lasing in YAG:Nd3+ and KGdW:Nd3+ crystals pumped with semiconductor lasers
S. V. Davydov, I. I. Kulak, A. I. Mitskovets, A. A. Stavrov, A. P. Shkadarevich, G. P. Yablonskii
Abstract:
Lasing in crystals with narrow absorption bands was achieved for the first time by excitation with radiation emitted from electron-beam-pumped CdSxSe1–x semiconductor lasers. The lasing thresholds of YAG:Nd3+ and KGdW:Nd3+ crystals pumped with λ = 586 nm radiation were ~ 2 and ~ 1 mJ, respectively. The efficiency of conversion of the pump radiation into the output radiation in the KGdW:Nd3+ laser was 0.27%.
Received: 25.05.1990
Citation:
S. V. Davydov, I. I. Kulak, A. I. Mitskovets, A. A. Stavrov, A. P. Shkadarevich, G. P. Yablonskii, “Lasing in YAG:Nd3+ and KGdW:Nd3+ crystals pumped with semiconductor lasers”, Kvantovaya Elektronika, 18:1 (1991), 20–21 [Sov J Quantum Electron, 21:1 (1991), 16–17]
Linking options:
https://www.mathnet.ru/eng/qe3697 https://www.mathnet.ru/eng/qe/v18/i1/p20
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