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Kvantovaya Elektronika, 1991, Volume 18, Number 1, Pages 20–21 (Mi qe3697)  

Lasers

Lasing in YAG:Nd3+ and KGdW:Nd3+ crystals pumped with semiconductor lasers

S. V. Davydov, I. I. Kulak, A. I. Mitskovets, A. A. Stavrov, A. P. Shkadarevich, G. P. Yablonskii
Abstract: Lasing in crystals with narrow absorption bands was achieved for the first time by excitation with radiation emitted from electron-beam-pumped CdSxSe1–x semiconductor lasers. The lasing thresholds of YAG:Nd3+ and KGdW:Nd3+ crystals pumped with λ = 586 nm radiation were ~ 2 and ~ 1 mJ, respectively. The efficiency of conversion of the pump radiation into the output radiation in the KGdW:Nd3+ laser was 0.27%.
Received: 25.05.1990
English version:
Soviet Journal of Quantum Electronics, 1991, Volume 21, Issue 1, Pages 16–17
DOI: https://doi.org/10.1070/QE1991v021n01ABEH003697
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.2
PACS: 42.55.Rz, 42.60.By, 42.60.Lh, 42.70.Hj
Language: Russian


Citation: S. V. Davydov, I. I. Kulak, A. I. Mitskovets, A. A. Stavrov, A. P. Shkadarevich, G. P. Yablonskii, “Lasing in YAG:Nd3+ and KGdW:Nd3+ crystals pumped with semiconductor lasers”, Kvantovaya Elektronika, 18:1 (1991), 20–21 [Sov J Quantum Electron, 21:1 (1991), 16–17]
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