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Kvantovaya Elektronika, 1986, Volume 13, Number 5, Pages 1070–1072 (Mi qe6865)  

Brief Communications

Investigation of the width of the emission line of single-frequency GaAlAs injection lasers

Yu. L. Bessonov, N. B. Kornilova, V. D. Kurnosov, V. N. Morozov, V. R. Shidlovskiĭ
Abstract: An investigation was made of the width of the emission line of single-frequency GaAlAs heterojunction lasers of various types. It was found that the absence of lateral optical confinement resulted in considerable broadening of the emission line. The observed broadening of the emission line of lasers exhibiting a gain-induced waveguiding effect was attributed to an increase in the level of spontaneous background of the modes generated in such lasers.
Received: 08.04.1985
Revised: 18.11.1985
English version:
Soviet Journal of Quantum Electronics, 1986, Volume 16, Issue 5, Pages 705–707
DOI: https://doi.org/10.1070/QE1986v016n05ABEH006865
Bibliographic databases:
Document Type: Article
UDC: 621.383.826.038.825.4
PACS: 42.55.Px, 42.60.Jf, 42.60.Lh
Language: Russian


Citation: Yu. L. Bessonov, N. B. Kornilova, V. D. Kurnosov, V. N. Morozov, V. R. Shidlovskiĭ, “Investigation of the width of the emission line of single-frequency GaAlAs injection lasers”, Kvantovaya Elektronika, 13:5 (1986), 1070–1072 [Sov J Quantum Electron, 16:5 (1986), 705–707]
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