Influence of an oxide film on the surfaces of Ga1–xAlxAs solid solutions on the threshold current density of an electron-beam-pumped laser

A study was made of the influence of the duration of etching of Ga_1–xAl_xAs solid solutions on the threshold current density of a laser pumped transversely by an electron beam. It was found that the surface treatment in a weak solution of ammonia made it possible to reduce by a factor of about 1.5 the threshold current density for a laser with a waveguide resonator structure when the electron beam energy was less than 15 keV.