A. P. Bogatov, P. G. Eliseev, O. G. Okhotnikov, M. P. Rakhval'skiĭ, K. A. Khaĭretdinov, “Optical traveling-wave amplifier based on an injection laser diode”, Kvantovaya Elektronika, 13:9 (1986), 1859–1867 [Sov J Quantum Electron, 16:9 (1986), 1221

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Kvantovaya Elektronika, 1986, Volume 13, Number 9, Pages 1859–1867 (Mi qe7375)

This article is cited in 1 scientific paper (total in 1 paper)

Optical traveling-wave amplifier based on an injection laser diode

A. P. Bogatov, P. G. Eliseev, O. G. Okhotnikov, M. P. Rakhval'skiĭ, K. A. Khaĭretdinov

Full-text PDF (1589 kB) Citations (1)

Abstract: Theoretical and experimental investigations were made of an optical traveling-wave amplifier based on an AlGaAs/GaAs heterostructure operating in the cw and pulsed regimes at room temperature. An investigation of the amplifier characteristics showed that the maximum gain in the active region was 38 dB and it was limited by saturation due to spontaneous emission. The total gain was 14 dB. The spectral width of the gain band reached 3.6×10³ GHz when the nonuniformity of the frequency characteristic amounted to 3 dB.

Received: 26.06.1985

English version:
Soviet Journal of Quantum Electronics, 1986, Volume 16, Issue 9, Pages 1221–1226
DOI: https://doi.org/10.1070/QE1986v016n09ABEH007375

Bibliographic databases:

Document Type: Article

UDC: 621.373.823.038.825.4

PACS: 42.60.Da, 42.55.Px, 42.60.Jf, 42.60.Lh

Language: Russian

Citation: A. P. Bogatov, P. G. Eliseev, O. G. Okhotnikov, M. P. Rakhval'skiĭ, K. A. Khaĭretdinov, “Optical traveling-wave amplifier based on an injection laser diode”, Kvantovaya Elektronika, 13:9 (1986), 1859–1867 [Sov J Quantum Electron, 16:9 (1986), 1221–1226]

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https://www.mathnet.ru/eng/qe7375

https://www.mathnet.ru/eng/qe/v13/i9/p1859

This publication is cited in the following 1 articles:

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