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Kvantovaya Elektronika, 1979, Volume 6, Number 1, Pages 5–24 (Mi qe8559)  

Molecular beam epitaxy — a promising method for fabrication of integrated–optics devices. I. Injection lasers (review)

Yu. V. Gulyaev, G. G. Dvoryankina, V. F. Dvoryankin, N. Ya. Cherevatskiĭ
Abstract: A review is given of the fabrication of laser double heterostructures using molecular beam epitaxy (MBE). A comparison is made of the properties of injection lasers fabricated by MBE and by liquid phase epitaxy. The achievements and potential applications of MBE in the fabrication of such high-quality devices are assessed.
Received: 30.01.1978
English version:
Soviet Journal of Quantum Electronics, 1979, Volume 9, Issue 1, Pages 1–12
DOI: https://doi.org/10.1070/QE1979v009n01ABEH008559
Document Type: Article
UDC: 539.234:621.375.8.038.825.4
PACS: 68.55.+b, 42.55.Px, 81.15.Ef
Language: Russian


Citation: Yu. V. Gulyaev, G. G. Dvoryankina, V. F. Dvoryankin, N. Ya. Cherevatskiĭ, “Molecular beam epitaxy — a promising method for fabrication of integrated–optics devices. I. Injection lasers (review)”, Kvantovaya Elektronika, 6:1 (1979), 5–24 [Sov J Quantum Electron, 9:1 (1979), 1–12]
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