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Solid-State Electronics, 2012, Volume 70, Pages 106–113
DOI: https://doi.org/10.1016/j.sse.2011.11.021 (Mi sse1) 		 
This article is cited in 5 scientific papers (total in 5 papers)

Quantum simulation of an ultrathin body field-effect transistor with channel imperfections

V. Vyurkovab, I. Semenikhinab, S. Filippovab, A. Orlikovskyab

a Institute of Physics and Technology of the Russian Academy of Sciences, Moscow, Russia
b Moscow Institute of Physics and Technology, Moscow Region, Russia
Full-text PDF Citations (5)
DOI: https://doi.org/10.1016/j.sse.2011.11.021
Funding agency Grant number
Russian Foundation for Basic Research 11-07-00464-a
Computer Company NIX F793/8-05
Russian Science Foundation
Dynasty Foundation
Ministry of Education and Science of the Russian Federation 2.1.1/5909
P558
14.740.11.0497
14.740.11.1257
The research was supported via the grant #11-07-00464-a of the Russian Basic Research Foundation and the grant #F793/8-05 of the Computer Company NIX (science@nix.ru). S.F. thanks the Russian Science Support Foundation for support under Project 'Best postgraduates of the Russian Academy of Sciences 2010', the Dynasty Foundation, and the Ministry of Education and Science of the Russian Federation for support under Project Nos. 2.1.1/5909, P558, 14.740.11.0497, and 14.740.11.1257. The authors are also grateful to the Joint Supercomputer Center of the Russian Academy of Sciences (http://www.jscc.ru/eng/index.shtml).
Bibliographic databases:
Document Type: Article
Language: English
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    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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