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This article is cited in 1 scientific paper (total in 1 paper)
INSTRUMENTS AND METHODS OF INVESTIGATION
New approaches to three-dimensional dislocation reconstruction in silicon from X-ray topo-tomography data
D. A. Zolotova, V. E. Asadchikova, A. V. Buzmakova, V. V. Volkova, I. G. Dyachkovaa, P. V. Konareva, V. A. Grigorevab, E. V. Suvorovc a Federal Scientific Research Center Crystallography and Photonics, Russian Academy of Sciences, Moscow
b National Engineering Physics Institute MEPhI (Moscow Engineering Physics Institute), Moscow
c Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
Abstract:
We present the results of processing the diffraction patterns of dislocation half-loops in Si(111) silicon single crystal, which were recorded by X-ray topo-tomography (XTT) at the European Synchrotron Radiation Facility (ESRF). An algorithm for preprocessing two-dimensional images by automatic noise filtering was proposed and solution reliability criteria were developed, which enabled a significant improvement in the quality of three-dimensional reconstruction of the spatial distribution of the defects under study. The experimental patterns were compared with those simulated numerically using the solution of Takagi equations. This approach made it possible not only to determine the geometry of the defects but also to derive information about the Burgers vector.
Keywords:
synchrotron radiation, topo-tomography, dislocation half-loops, silicon single crystal, Takagi equations.
Received: March 28, 2022 Revised: April 25, 2022 Accepted: May 28, 2022
Citation:
D. A. Zolotov, V. E. Asadchikov, A. V. Buzmakov, V. V. Volkov, I. G. Dyachkova, P. V. Konarev, V. A. Grigorev, E. V. Suvorov, “New approaches to three-dimensional dislocation reconstruction in silicon from X-ray topo-tomography data”, UFN, 193:9 (2023), 1001–1009; Phys. Usp., 66:9 (2023), 943–950
Linking options:
https://www.mathnet.ru/eng/ufn14958 https://www.mathnet.ru/eng/ufn/v193/i9/p1001
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