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Uspekhi Fizicheskikh Nauk, 2024, Volume 194, Number 11, Pages 1223–1239
DOI: https://doi.org/10.3367/UFNr.2024.09.039762 (Mi ufn15890) 		 
55th ANNIVERSARY OF THE INSTITUTE OF SPECTROSCOPY OF THE RUSSIAN ACADEMY OF SCIENCES (ISAN). REVIEWS OF TOPICAL PROBLEMS

Silicon integrated photonics

S. S. Kosolobov, I. A. Pshenichnyuk, K. R. Taziev, A. K. Zemtsova, D. S. Zemtsov, A. S. Smirnov, D. M. Zhigunov, V. P. Drachev

Skolkovo Institute of Science and Technology, Territory of the Skolkovo Innovation Center
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DOI: https://doi.org/10.3367/UFNr.2024.09.039762
Abstract: Technologies of silicon integrated photonics are the basis for the fabrication of a class of devices, such as optical modulators, photodetectors, optical filters and switches, multiplexers and demultiplexers, and optical transceivers. In many respects, silicon integrated photonics competes with alternative platforms based on indium phosphide, silicon nitride and dioxide, and other platforms. Here we provide an overview of modern approaches used in silicon integrated photonic technologies, describe the components of photonic integrated circuits and devices developed on their basis, and make a comparison with alternative technology platforms.
Keywords: silicon, integrated photonics, nanophotonics, silicon-on-insulator, photonic integrated circuits.
Funding agency Grant number
Russian Science Foundation 23-91-06301
This study was supported by the Russian Science Foundation (grant no. 23-91-06301).
Received: April 15, 2024
Revised: September 12, 2024
Accepted: September 13, 2024
English version:
Physics–Uspekhi, 2024, Volume 67, Issue 11, Pages 1153–1167
DOI: https://doi.org/10.3367/UFNe.2024.09.039762
Bibliographic databases:
Document Type: Article
PACS: 42.82.-m, 42.82.Et, 84.40.Lj
Language: Russian
Citation: S. S. Kosolobov, I. A. Pshenichnyuk, K. R. Taziev, A. K. Zemtsova, D. S. Zemtsov, A. S. Smirnov, D. M. Zhigunov, V. P. Drachev, “Silicon integrated photonics”, UFN, 194:11 (2024), 1223–1239; Phys. Usp., 67:11 (2024), 1153–1167
Citation in format AMSBIB
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