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Uspekhi Fizicheskikh Nauk, 2019, Volume 189, Number 8, Pages 803–848
DOI: https://doi.org/10.3367/UFNr.2018.10.038437 (Mi ufn6380) 		 
This article is cited in 16 scientific papers (total in 16 papers)

REVIEWS OF TOPICAL PROBLEMS

SiC-based electronics (100th anniversary of the Ioffe Institute)

A. A. Lebedev, P. A. Ivanov, M. E. Levinshtein, E. N. Mokhov, S. S. Nagalyuk, A. N. Anisimov, P. G. Baranov

Ioffe Institute, St. Petersburg
Full-text PDF (2026 kB) Citations (16)
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DOI: https://doi.org/10.3367/UFNr.2018.10.038437
URL: https://www.ufn.ru/ru/articles/2019/8/c
Abstract: We review the history and modern state of silicon carbide and SiC-based devices. The main techniques for growing bulk SiC crystals and epitaxial SiC films are discussed. Epitaxial SiC structures used for post-growth processing are briefly reviewed. The state of the art achieved in developing SiC devices is presented. The main problems that occur in developing SiC equipment and prospects for designing and developing such equipment are analyzed.
Keywords: silicon carbide, bulk crystal, sublimation, polytype, lateral overgrowth, dislocation, high-voltage power diode, high-voltage subnanosecond pulse diode, thyristor, bipolar junction transistor, analytic model, computer simulation, color center, spin, sensorics, magnetic field, ODMR, graphene, two-dimensional material, Raman spectroscopy.
Funding agency Grant number
Russian Science Foundation 16-42-01098
Received: September 4, 2018
Revised: October 1, 2018
Accepted: October 4, 2018
English version:
Physics–Uspekhi, 2019, Volume 62, Issue 8, Pages 754–794
DOI: https://doi.org/10.3367/UFNe.2018.10.038437
Bibliographic databases:
Document Type: Article
PACS: 81.05.ue, 81.10.-h, 85.30.-z
Language: Russian
Citation: A. A. Lebedev, P. A. Ivanov, M. E. Levinshtein, E. N. Mokhov, S. S. Nagalyuk, A. N. Anisimov, P. G. Baranov, “SiC-based electronics (100th anniversary of the Ioffe Institute)”, UFN, 189:8 (2019), 803–848; Phys. Usp., 62:8 (2019), 754–794
Citation in format AMSBIB
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