S. V. Izmailov, Ts. A. Minassian, “The possible model of the "longtime traps” of the current carriers in semiconductors II. The baste level”, Proceedings of the YSU, Physical and Mathematical Sciences, 1986, no. 2, 65

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Proceedings of the Yerevan State University, series Physical and Mathematical Sciences, 1986, Issue 2, Pages 65–68 (Mi uzeru1009)

Physics

The possible model of the "longtime traps” of the current carriers in semiconductors II. The baste level

S. V. Izmailov^a, Ts. A. Minassian^b

^a A. I. Hertsen Leningrad Pedagogical Institute
^b Yerevan State University

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Received: 01.07.1983
Accepted: 13.05.1986

Document Type: Article

UDC: 537.311

Language: Russian

Citation: S. V. Izmailov, Ts. A. Minassian, “The possible model of the "longtime traps” of the current carriers in semiconductors II. The baste level”, Proceedings of the YSU, Physical and Mathematical Sciences, 1986, no. 2, 65–68

Citation in format AMSBIB

\Bibitem{IzmMin86}

\by S.~V.~Izmailov, Ts.~A.~Minassian

\paper The possible model of the ``longtime traps” of the current carriers in semiconductors II. The baste level

\jour Proceedings of the YSU, Physical  and Mathematical Sciences

\yr 1986

\issue 2

\pages 65--68

\mathnet{http://mi.mathnet.ru/uzeru1009}

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Proceedings of the Yerevan State University, series Physical and Mathematical Sciences

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