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Proceedings of the Yerevan State University, series Physical and Mathematical Sciences, 1989, Issue 1, Pages 56–61 (Mi uzeru850)  
Physics

Photosensitive silicon structures doped with Se

V. M. Arutyunyan, R. S. Barscghian, G. E. Grigorian, V. Sh. Zargarian, V. A. Mkhikian, B. O. Semerdjian

Yerevan State University
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Abstract: The photoelectric properties of $p^+-n-n^+$ silicon structures doped with Selen have been investigated. The influence of impurity absorption range illumination on current voltage and spectral characteristics of the devices have been considered.
Received: 01.02.1988
Accepted: 07.06.1989
Document Type: Article
UDC: 621.315.592
Language: Russian
Citation: V. M. Arutyunyan, R. S. Barscghian, G. E. Grigorian, V. Sh. Zargarian, V. A. Mkhikian, B. O. Semerdjian, “Photosensitive silicon structures doped with Se”, Proceedings of the YSU, Physical and Mathematical Sciences, 1989, no. 1, 56–61
Citation in format AMSBIB
\Bibitem{AruBarGri89}
\by V.~M.~Arutyunyan, R.~S.~Barscghian, G.~E.~Grigorian, V.~Sh.~Zargarian, V.~A.~Mkhikian, B.~O.~Semerdjian
\paper Photosensitive silicon structures doped with Se
\jour Proceedings of the YSU, Physical and Mathematical Sciences
\yr 1989
\issue 1
\pages 56--61
\mathnet{http://mi.mathnet.ru/uzeru850}
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