V. M. Arutyunyan, M. L. Dimacsyan, G. E. Grigorian, “The growth and investigation of some electrophysical properties of gallium monoselenide”, Proceedings of the YSU, Physical and Mathematical Sciences, 1989, no. 3, 65

Proceedings of the Yerevan State University, series Physical and Mathematical Sciences

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Proceedings of the Yerevan State University, series Physical and Mathematical Sciences, 1989, Issue 3, Pages 65–68 (Mi uzeru877)

Physics

The growth and investigation of some electrophysical properties of gallium monoselenide

V. M. Arutyunyan, M. L. Dimacsyan, G. E. Grigorian

Yerevan State University

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Abstract: By means of Bridgman’s technique lamellar crystals of p-GaSe have been obtained. The temperature dependences of electroconductivity, Hall coefficient, carriers concentration and mobility have been studied.

Received: 07.02.1989
Accepted: 05.10.1989

Document Type: Article

UDC: 537.311.33

Language: Russian

Citation: V. M. Arutyunyan, M. L. Dimacsyan, G. E. Grigorian, “The growth and investigation of some electrophysical properties of gallium monoselenide”, Proceedings of the YSU, Physical and Mathematical Sciences, 1989, no. 3, 65–68

Citation in format AMSBIB

\Bibitem{AruDimGri89}

\by V.~M.~Arutyunyan, M.~L.~Dimacsyan, G.~E.~Grigorian

\paper The growth and investigation of some electrophysical properties of gallium monoselenide

\jour Proceedings of the YSU, Physical  and Mathematical Sciences

\yr 1989

\issue 3

\pages 65--68

\mathnet{http://mi.mathnet.ru/uzeru877}

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Proceedings of the Yerevan State University, series Physical and Mathematical Sciences

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