Distribution of point defects in the Si-faze including Sic-faze, formed by endotaxe method of semiconductor heterostructures

Heteroepitaxy layers of silicon carbide on silicon substrates is one of the best candidates for high-power, high-temperature and high-frequency applications in electronics. Solid-phase process of endotaxe of silicon carbide is accompanied by evolution of Si-phase into Sic-one in hydrogen hydrocarbon atmosphere at temperature range 1360–1380 $^{\circ}$C and normal pressure. The distribution of thermal intrinsic point defects of different nature in silicon substrates in dependence of the type of its conductivity and in conditions of isovalent doping of carbon is investigated in this paper.