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Computational nanotechnology, 2017, выпуск 1, страницы 52–53
(Mi cn110)
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НАНОСТРУКТУРИРОВАННЫЕ МАТЕРИАЛЫ
Properties of $\mathrm{GaAs/AlGaAs}$ heterophototransformators with holographic concentrators
M. A. Abdukadirova, Z. T. Azamatovb, N. A. Axmedovaa, A. S. Ganiyeva, R. A. Muminovc a Tashkent University of Information Technology
b Tashkent State Technical University
c Physical-Technical Institute, Uzbekistan Academy of Sciences
Аннотация:
Studied photovoltaic processes in $\mathrm{GaAs/AlGaAs}$ heterostructure solar cell with a spectral sensitivity in the range of $450\leq\lambda\leq850$ nm under holographic concentrator illumination. It is shown that with increasing of concentration of the solar flux to 10krat with a linear increase in short-circuit current and open circuit voltage efficiency reaches its maximum value.
Ключевые слова:
solar sell, semi conduction, gallium arsenide, spektrowave diapazon, short circuit current, open circuit voltage, hologhraphic concentrator.
Образец цитирования:
M. A. Abdukadirov, Z. T. Azamatov, N. A. Axmedova, A. S. Ganiyev, R. A. Muminov, “Properties of $\mathrm{GaAs/AlGaAs}$ heterophototransformators with holographic concentrators”, Comp. nanotechnol., 2017, no. 1, 52–53
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/cn110 https://www.mathnet.ru/rus/cn/y2017/i1/p52
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Страница аннотации: | 118 | PDF полного текста: | 40 | Список литературы: | 20 |
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