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Computational nanotechnology, 2016, выпуск 3, страницы 203–207
(Mi cn89)
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Эта публикация цитируется в 2 научных статьях (всего в 2 статьях)
НАУЧНАЯ ШКОЛА РАХИМОВА Р.Х.
НАНОСТРУКТУРИРОВАННЫЕ МАТЕРИАЛЫ
The difference between the contact structure with nanosize inclusions from the semiconductor photodiodes
E. Z. Imamova, T. A. Djalalova, R. A. Muminovb, R. Kh. Rakhimovc a Tashkent University of Information Technology
b Physical-Technical Institute, «Physics-Sun». Uzbekistan Academy of sciences
c Institute of materials science, «Physics-sun». Uzbekistan Academy of sciences
Аннотация:
In the complex of works [1] has developed a fundamentally new model of the contact structure, which is formed on the illuminated surface of silicon by spraying nanoinclusions with great electrical capacitance from another semiconductor. Photovoltaic converters based on the new contact structure exhibit unique electrical properties. In this paper we show the important structural differences between the new contact and the traditional semiconductor photodiodes.
Ключевые слова:
solar energy, solar cell, nanoinclusions, quantum dots, nanoscale contact structure, nanoscale «p-n junction».
Образец цитирования:
E. Z. Imamov, T. A. Djalalov, R. A. Muminov, R. Kh. Rakhimov, “The difference between the contact structure with nanosize inclusions from the semiconductor photodiodes”, Comp. nanotechnol., 2016, no. 3, 203–207
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/cn89 https://www.mathnet.ru/rus/cn/y2016/i3/p203
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