Growth kinetics of induced domains in Ba$_{0.8}$Sr$_{0.2}$TiO$_3$ ferroelectric thin films

The possibility of the formation of stable domain states in Ba$_{0.8}$Sr$_{0.2}$TiO$_3$ films on the initial surface and in a preliminarily polarized region of the film has been demonstrated using piezoresponse force microscopy. The velocity of lateral motion of a domain wall, coercive field, minimal domain size, and recording time for the domain formation under the applied voltage have been calculated.