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Fizika Tverdogo Tela, 1986, Volume 28, Issue 1, Pages 12–20 (Mi ftt3)  
Many-impurity Anderson model of valence change in re semiconductors

A. N. Kocharyan

Yerevan Physics Institute
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Received: 23.04.1985
Bibliographic databases:
Document Type: Article
UDC: 53:537.311.33
Language: Russian
Citation: A. N. Kocharyan, “Many-impurity Anderson model of valence change in re semiconductors”, Fizika Tverdogo Tela, 28:1 (1986), 12–20
Citation in format AMSBIB
\Bibitem{Koc86}
\by A.~N.~Kocharyan
\paper Many-impurity Anderson model of valence change in re semiconductors
\jour Fizika Tverdogo Tela
\yr 1986
\vol 28
\issue 1
\pages 12--20
\mathnet{http://mi.mathnet.ru/ftt3}
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  • https://www.mathnet.ru/eng/ftt/v28/i1/p12
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