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Fizika Tverdogo Tela, 1991, Volume 33, Issue 11, Pages 3315–3326 (Mi ftt7183)  
Epr in the $2$ mm range and optical intrinsic defect absorption in $4H$ $\mathrm{SiC}$ epitaxial layers

Yu. A. Vodakov, E. N. Kalabukhova, S. N. Lukin, A. A. Lepneva, E. N. Mokhov, B. D. Shanina

Ioffe Physico-Technical Institute USSR Academy of Sciences, Leningrad
Full-text PDF (1529 kB)
Received: 17.06.1991
Bibliographic databases:
Document Type: Article
UDC: 621.315.592
Language: Russian
Citation: Yu. A. Vodakov, E. N. Kalabukhova, S. N. Lukin, A. A. Lepneva, E. N. Mokhov, B. D. Shanina, “Epr in the $2$ mm range and optical intrinsic defect absorption in $4H$ $\mathrm{SiC}$ epitaxial layers”, Fizika Tverdogo Tela, 33:11 (1991), 3315–3326
Citation in format AMSBIB
\Bibitem{VodKalLuk91}
\by Yu.~A.~Vodakov, E.~N.~Kalabukhova, S.~N.~Lukin, A.~A.~Lepneva, E.~N.~Mokhov, B.~D.~Shanina
\paper Epr in the $2$\,mm range and optical intrinsic defect absorption in $4H$ $\mathrm{SiC}$ epitaxial layers
\jour Fizika Tverdogo Tela
\yr 1991
\vol 33
\issue 11
\pages 3315--3326
\mathnet{http://mi.mathnet.ru/ftt7183}
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