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Zhurnal Tekhnicheskoi Fiziki, 1992, Volume 62, Issue 2, Pages 105–111
(Mi jtf4564)
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Solid-State Electronics
ELECTRON-MICROSCOPIC STUDY OF INGAASP/INGAP/GAAS STRUCTURES WITH THIN
(LESS-THAN-10 NM) LAYERS BY THE LIQUID-PHASE EPITAXY TECHNIQUE
N. A. Bert, D. Z. Garbuzov, E. V. Zhuravkevich, S. G. Konnikov, A. O. Kosogov, Y. G. Musikhin
Citation:
N. A. Bert, D. Z. Garbuzov, E. V. Zhuravkevich, S. G. Konnikov, A. O. Kosogov, Y. G. Musikhin, “ELECTRON-MICROSCOPIC STUDY OF INGAASP/INGAP/GAAS STRUCTURES WITH THIN
(LESS-THAN-10 NM) LAYERS BY THE LIQUID-PHASE EPITAXY TECHNIQUE”, Zhurnal Tekhnicheskoi Fiziki, 62:2 (1992), 105–111
Linking options:
https://www.mathnet.ru/eng/jtf4564 https://www.mathnet.ru/eng/jtf/v62/i2/p105
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| Statistics & downloads: |
| Abstract page: | 118 | | Full-text PDF : | 39 |
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