Resistance change of thin films Bi$_2$Se$_3$ and heterostructures Bi$_2$Se$_3$ on graphene under tensile deformation

The creation of vertical Bi$_2$Se$_3$ heterostructures based on graphene, obtained by physical vapor deposition, leads not only to a more advanced structure and conductivity of the Bi$_2$Se$_3$ layer, but also to improved mechanical properties. Films Bi$_2$Se$_3$ with a thickness of 20–40 nm based on CVD graphene slightly changed their resistance under tensile deformations created during bending of the structures. It was found that the resistance increases by only 20–30% when stretched to 3.3%. When Bi$_2$Se$_3$ is grown on a layer of printed graphene, a film Bi$_2$Se$_3$ is formed that is inhomogeneous in area and thickness, cracking at strains greater than 1.5%.