Design and efficiency correlation of IR light-emitting diodes based on quantum dimensional heterostructures AlGaAs

Investigation of infra-red (850 nm) light-emitting diodes based on AlGaAs quantum dimensional heterostructures, grown by the MOCVD technique, with multiple quantum wells in active region and with internal reflectors: Bragg reflector, additional “reflective” layer Al$_{0.9}$Ga$_{0.1}$As or back silver mirror, was carried out. Two types of post-growth technology: LED manufacturing planar technology on growth substrate $n$-GaAs and “transfer” technology of grown heterostructure on carrier-substrate $p$-GaAs and following etching of growth substrate, were investigated. Maximum external quantum efficiency (EQE > 37%) at current 0.1–0.2 A was achieved in LED based on heterostructure with Bragg reflector and additional Ag-mirror, built-in LED by heterostructure “transfer” method on $p$-GaAs carrier with the use of argentum paste. Maximum optical power (Popt = 275 mW) at current I = 1.2 A was achieved in LEDs, manufactured by “transfer” method with the use of Au + In alloy.