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Zhurnal Tekhnicheskoi Fiziki, 2024, Volume 94, Issue 4, Pages 646–651
DOI: https://doi.org/10.61011/JTF.2024.04.57536.156-23 (Mi jtf6759) 		 
Physics of nanostructures

Effect of substrate temperature on the Ga-S films properties prepared by PECVD

M. A. Kudryashovab, L. A. Mochalovab, M. A. Vshivtseva, I. O. Prokhorova, Yu. M. Spivakc, V. A. Moshnikovc, Yu. P. Kudryashovab, P. V. Mosyaginb, E. A. Slapovskayab, V. M. Malysheva

a Nizhny Novgorod State Technical University, 603155 Nizhny Novgorod, Russia
b National Research Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia
c Saint Petersburg Electrotechnical University "LETI", 197022 St. Petersburg, Russia
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DOI: https://doi.org/10.61011/JTF.2024.04.57536.156-23
Abstract: Gallium sulfide (GaS) has a great potential for applications in optoelectronics and energy storage. In view of the sufficiently large Eg, thin films of gallium sulfide can be used as a buffer layer in a solar cell. GaS also provides efficient passivation of the GaAs surface. In this work, Ga-S thin films were obtained for the first time by plasma-chemical vapor deposition. High-purity elemental Ga and S were used as precursors. The plasma was excited by an RF generator (40.68 MHz) at a reduced pressure of 0.1 Torr. The composition, structural and optical properties of Ga-S films were studied depending on the substrate temperature. All films were highly transparent (75%) in the range of 400–1100 nm.
Keywords: gallium sulfide, films, PECVD, structure, optical properties.
Funding agency Grant number
Russian Science Foundation 22-19-20081
The study was supported by the Russian Science Foundation, grant № 22-19-20081, https://rscf.ru/en/project/22-19-20081/.
Received: 26.06.2023
Revised: 30.12.2023
Accepted: 17.01.2024
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. A. Kudryashov, L. A. Mochalov, M. A. Vshivtsev, I. O. Prokhorov, Yu. M. Spivak, V. A. Moshnikov, Yu. P. Kudryashova, P. V. Mosyagin, E. A. Slapovskaya, V. M. Malyshev, “Effect of substrate temperature on the Ga-S films properties prepared by PECVD”, Zhurnal Tekhnicheskoi Fiziki, 94:4 (2024), 646–651
Citation in format AMSBIB
\Bibitem{KudMocVsh24}
\by M.~A.~Kudryashov, L.~A.~Mochalov, M.~A.~Vshivtsev, I.~O.~Prokhorov, Yu.~M.~Spivak, V.~A.~Moshnikov, Yu.~P.~Kudryashova, P.~V.~Mosyagin, E.~A.~Slapovskaya, V.~M.~Malyshev
\paper Effect of substrate temperature on the Ga-S films properties prepared by PECVD
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2024
\vol 94
\issue 4
\pages 646--651
\mathnet{http://mi.mathnet.ru/jtf6759}
\elib{https://elibrary.ru/item.asp?id=64993580}
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