Model of behavior of MOS structures during radiation-thermal treatments

A quantitative model of the influence of radiation-thermal treatments on the resistance of MOS structures to ionizing radiation has been developed. The model is based on the interaction of holes formed during ionizing irradiation with hydrogen-containing and hydrogen-free traps in the gate dielectric. The capture of holes by hydrogen-containing traps stimulates the breaking of the hy-drogen bond and their transformation into hydrogen-free traps with a smaller capture cross section. The model makes it possible to describe the increase in the radiation resistance of MOS structures during successive irradiation-annealing cycles while maintaining the integral concentration of traps.