Intercalated structures with a $\delta$ topological zone of alternating semiconductors and magnetoactive nanolayers and behavior of their impedance in magnetic and electric fields

Hybrid nanostructures with $\delta$-topological configuration based on an InSe layered semiconductor with chromium implanted in the van der Waals gap of its crystalline structure ($\delta$-TNIS) are formed using the laser-stimulated technique. Giant magnetoresistive effect takes place in such structures at room temperature in weak magnetic fields. The structures formed in this way exhibit high magnetophase sensitivity and a high-frequency inductive response controlled by a constant electric field applied at right angles to the nanolayers.