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CHEMISTRY AND MATERIAL SCIENCE
Methodology of analyzing the InSb semiconductor quantum dots parameters
A. I. Mikhailov, V. F. Kabanov, M. V. Gavrikov Saratov State University, Department of Nanoand Biomedical Technologies,
Astrakhanskaya, 83, Saratov, 410012, Russia
Abstract:
The investigation of indium antimonide quantum dots has been carried out by the methods of differential normalized tunnel current-voltage characteristics, electron microscopy, particle size analysis and spectral dependence of the absorption coefficient. Qualitatively and quantitatively consistent measurement results were obtained with an error less than 15 %. It is concluded that the analysis of normalized differential tunnel current-voltage characteristics is an effective method of express-analysis that can be used in investigation of quantum-sized objects properties.
Keywords:
quantum dots, indium antimonide, differential tunnel current-voltage characteristics, energy spectrum.
Received: 12.09.2019 Revised: 01.11.2019
Citation:
A. I. Mikhailov, V. F. Kabanov, M. V. Gavrikov, “Methodology of analyzing the InSb semiconductor quantum dots parameters”, Nanosystems: Physics, Chemistry, Mathematics, 10:6 (2019), 720–724
Linking options:
https://www.mathnet.ru/eng/nano489 https://www.mathnet.ru/eng/nano/v10/i6/p720
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Abstract page: | 119 | Full-text PDF : | 48 |
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