Effect of the mild method of formation V$_{x}$O$_{y}$/InP structures using V$_{2}$O$_{5}$ gel on the process of their oxidation and composition of nanosized oxide films

A V$_{x}$O$_{y}$/InP structure was formed by the deposition of a V$_{2}$O$_{5}$ gel aerosol on an InP surface, followed by thermal annealing. This approach avoids chemostimulator interactions with the substrate prior to thermal oxidation, which is characteristic of ‘hard' methods of chemostimulator deposition. The oxidation process of such structures occurs in the transit mechanism with a slight increase growth rate of films by 20 – 40 % in comparison with the oxidation of InP. The transit action of chemostimulator has been associated with the chemical bonding of V$_{2}$O$_{5}$ into InVO$_{4}$ (XRD), which predominates over mutual transformations of vanadium oxide, which forms in different oxidation states.