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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 11, Pages 1257–1262
DOI: https://doi.org/10.21883/FTP.2018.11.46579.01 (Mi phts5676) 		 
This article is cited in 4 scientific papers (total in 4 papers)

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Calculation of multiply charged states of impurity-defect centers in epitaxial Hg$_{1-x}$Cd$_{x}$Te layers

D. V. Kozlovab, V. V. Rumyantsevab, S. V. Morozovba, A. M. Kadykova, M. A. Fadeeva, H.-W. Hübersc, V. I. Gavrilenkoab

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
c Institut für Physik, Humboldt-Universität zu Berlin, Berlin, Germany
Full-text PDF (458 kB) Citations (4) English version article
DOI: https://doi.org/10.21883/FTP.2018.11.46579.01
Abstract: A method for calculating the states of multivalent donors and acceptors in Hg$_{1-x}$Cd$_{x}$Te materials is developed. The ionization energies of deep acceptor and donor centers in epitaxial Hg$_{1-x}$Cd$_{x}$Te films are calculated. The calculation method takes into account the influence of both the valence band and the conduction band on the states of impurity-defect centers. The calculations of energies for the levels of tetravalent acceptors and donors associated with crystalline structure defects indicate the intercenter nature of lines observed previously in the photoluminescence spectra of Hg$_{1-x}$Cd$_{x}$Te films.
Keywords: Multiply Charged States, Crystalline Structure Defects, Ionization Energy, Mercury Vacancies, Acceptor Centers.
Funding agency Grant number
Russian Science Foundation 17-12-01360
Received: 25.04.2018
Accepted: 07.05.2018
English version:
Semiconductors, 2018, Volume 52, Issue 11, Pages 1369–1374
DOI: https://doi.org/10.1134/S1063782618110131
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. V. Kozlov, V. V. Rumyantsev, S. V. Morozov, A. M. Kadykov, M. A. Fadeev, H.-W. Hübers, V. I. Gavrilenko, “Calculation of multiply charged states of impurity-defect centers in epitaxial Hg$_{1-x}$Cd$_{x}$Te layers”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1257–1262; Semiconductors, 52:11 (2018), 1369–1374
Citation in format AMSBIB
\Bibitem{KozRumMor18}
\by D.~V.~Kozlov, V.~V.~Rumyantsev, S.~V.~Morozov, A.~M.~Kadykov, M.~A.~Fadeev, H.-W.~H\"ubers, V.~I.~Gavrilenko
\paper Calculation of multiply charged states of impurity-defect centers in epitaxial Hg$_{1-x}$Cd$_{x}$Te layers
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 11
\pages 1257--1262
\mathnet{http://mi.mathnet.ru/phts5676}
\crossref{https://doi.org/10.21883/FTP.2018.11.46579.01}
\elib{https://elibrary.ru/item.asp?id=36903594}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 11
\pages 1369--1374
\crossref{https://doi.org/10.1134/S1063782618110131}
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    • This publication is cited in the following 4 articles:
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