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Fizika i Tekhnika Poluprovodnikov, 2024, Volume 58, Issue 8, Pages 443–447
DOI: https://doi.org/10.61011/FTP.2024.08.59203.6261 (Mi phts6776) 		 
Amorphous, glassy, organic semiconductors

Influence of Bi impurity on the main parameters of the current-voltage characteristics of the Ge$_2$Sb$_2$Te$_5$ phase-change memory semiconductor

S. A. Fefelova, L. P. Kazakovaab, N. A. Bogoslovskiia, A. B. Bylevb, E. V. Gushchinaa, Zh. K. Tolepovc, A. S. Zhakypovc, O. Yu. Prikhodkoc

a Ioffe Institute, 194021 St. Petersburg, Russia
b Saint Petersburg State Forest Technical University under name of S. M. Kirov, 194021 St. Petersburg, Russia
c Al-Farabi Kazakh National University, 050038 Almaty, Kazakhstan
Full-text PDF (356 kB)
DOI: https://doi.org/10.61011/FTP.2024.08.59203.6261
Abstract: The current-voltage characteristics of thin-film samples of the Ge$_2$Sb$_2$Te$_5$ phase-change memory material are measured in a current control mode. The influence of Bi impurity on the main parameters of the current-voltage characteristic is studied. The obtained results show an increase in the stability of the electrical properties of Ge$_2$Sb$_2$Te$_5$ when doped with Bi at concentrations of 6.3 and 12.0 at.%. The introduction of Bi impurity leads to the disappearance of voltage fluctuations after switching.
Keywords: chalcogenide glassy semiconductors, Ge$_2$Sb$_2$Te$_5$, phase-change memory, bismuth doping.
Funding agency Grant number
Science Committee of the Ministry of Science and Higher Education of the Republic of Kazakhstan AP14871061
Received: 12.04.2024
Revised: 19.09.2024
Accepted: 01.10.2024
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. A. Fefelov, L. P. Kazakova, N. A. Bogoslovskii, A. B. Bylev, E. V. Gushchina, Zh. K. Tolepov, A. S. Zhakypov, O. Yu. Prikhodko, “Influence of Bi impurity on the main parameters of the current-voltage characteristics of the Ge$_2$Sb$_2$Te$_5$ phase-change memory semiconductor”, Fizika i Tekhnika Poluprovodnikov, 58:8 (2024), 443–447
Citation in format AMSBIB
\Bibitem{FefKazBog24}
\by S.~A.~Fefelov, L.~P.~Kazakova, N.~A.~Bogoslovskii, A.~B.~Bylev, E.~V.~Gushchina, Zh.~K.~Tolepov, A.~S.~Zhakypov, O.~Yu.~Prikhodko
\paper Influence of Bi impurity on the main parameters of the current-voltage characteristics of the Ge$_2$Sb$_2$Te$_5$ phase-change memory semiconductor
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2024
\vol 58
\issue 8
\pages 443--447
\mathnet{http://mi.mathnet.ru/phts6776}
\elib{https://elibrary.ru/item.asp?id=79007187}
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