Photosensitive thin-film In/$p$-Pb$_x$Sn$_{1-x}$S Schottky barriers: Fabrication and properties

Thin Pb$_x$Sn$_{1-x}$S films are obtained by the “hot-wall” method at substrate temperatures of 210–330$^\circ$C. The microstructure, composition, morphology, and electrical characteristics of films are investigated. On the basis of the obtained films, photosensitive In/$p$-Pb$_x$Sn$_{1-x}$S Schottky barriers are fabricated for the first time. The photosensivity spectra of these structures are investigated, and the character of interband transitions and the band-gap values are determined from them. The conclusion is drawn that Pb$_x$Sn$_{1-x}$S thin polycrystalline films may be used in solar-energy converters.